Study the electrical properties of ZnOSiO2 detector prepared by free rappid thermal oxidation

Zinc thin films deposited on (n-type)silicon at 510o C with oxidation times (10,20,30,35) sec have been oxidized. by thermal diffusion method using heater instead of conventional furnace .It is found that we can get zinc oxide outoxegen and closed farneces rapidly. The electrical properties in dark show the detector shottky diode, best time to obtain 35 sec, ideality factor 3.3 a work function 0.58 ev. It resalts light power (50,100,150,200,250) mw/cm2.Show oxidiced detectivity 540.8 high responsivity which enable detect IR signals.